Hand rubbing nuclear fusion live in the wilderness

Chapter 185 Ion Implantation
In the chemical laboratory, Won dilutes the extracted concentrated sulfuric acid and concentrated nitric acid to the desired concentration and then mixes them.

After the treatment, the aluminum ion solution containing positive trivalent aluminum can be prepared by adding a certain amount of aluminum powder to the mixed solution.

The only problem is that the aluminum ions implanted in the silicon carbide crystal need to be stabilized in a relative concentration.

This requires Korean won to judge the specific content of aluminum ions in the aluminum ion solution.

Although troublesome, there are ways.

Aluminum ions in the mixed solution were precipitated by adding magnesium chloride and sodium hydroxide, and then judged.

Using this method, after several experiments, Han Yuan also successfully prepared an aluminum ion solution that meets the requirements of erosion injection.

After preparing a suitable solution of aluminum ions, Han Yuan applied another layer of paraffin to the silicon carbide crystal material that had been etched by hydrofluoric acid, and then cleaned out the places that needed to be injected with aluminum ions.

The processed silicon carbide crystals are neatly arranged in a rectangular wide-mouth glass container.

The glass container is on an iron stand, and there are several alcohol blowtorches below.

And this one glass vessel is also slightly different from other glassware.

In the glass wall of this glass container, there are purple copper wires, and the copper wires are still exposed in some places.

The aluminum ion solution prepared before was slowly poured into the container along the glass tube, submerging about half of the silicon carbide crystal material.

After dealing with this, Won first lit all the alcohol lamps to start heating the aluminum ion solution.

When the solution started to boil, the copper wire in the glass container was connected to the power supply, and then the electric valve was closed.

Some viewers in the live broadcast room and scientific researchers from various countries were very interested in the mixed solution of aluminum sulfate and aluminum nitrate prepared by Korean Won and the process of making it out, and sent various inquiries on the bullet screen.

[Isn't this a solution of aluminum sulfate and aluminum nitrate?How did it become an aluminum ion? 】

[It is said that the reaction between nitric acid and aluminum will form a dense oxide film on the surface of aluminum?Aluminum with an oxide film, even if it is aluminum powder, cannot be counted as aluminum ions, right? 】

[Heat, power on, so that aluminum ions can be implanted into silicon carbide? 】

[Concentrated nitric acid will form an oxide film, but dilute nitric acid will not. 】

[Silicon carbide should be corroded by sulfuric acid and nitric acid, right? 】

[I was thinking, can chips do the same? 】

[Can this ion doping method form a stable N-drift layer on the bottom layer of silicon carbide?How many millimeters can it be injected into? 】

Seeing the barrage of inquiries, Han Yuan smiled and explained: "It is not a simple matter to implant aluminum ions that meet the requirements of erosion implantation into silicon carbide materials.

"Ion implantation requires specific processes and equipment to handle it, even in modern industry."

"The principle is to use 100keV high energy to accelerate the ions to be implanted and inject them into the material."

"The ions in the ion beam will undergo a series of physical and chemical interactions with the atoms or molecules in the material, gradually lose energy, and finally stay in the material."

"Eventually cause changes in the surface composition, structure and properties of the material, thereby optimizing the surface properties of the material, or obtaining some new excellent properties."

"Integrated chips basically use 'ion implantation' to process silicon substrates."

"Generally speaking, the N-drift layer of silicon crystals is made of aluminum ions. The most widely used ion source used aluminum metal microwave ion source as the ion beam."

"However, the structure of the ion source is very complicated and the production cost is very high."

"Besides, compared to silicon-based chips, the use of aluminum ions to implant silicon carbide for fabrication to form an N-drift layer has a big problem."

"That is, the atomic density of silicon carbide crystals is higher than that of silicon. To achieve the same implantation depth, the ion implantation process requires ions to have higher implantation energy."

"Even if there is a professional injection instrument, the required voltage intensity generally has to reach 350KeV, and the high one even requires more than 700KeV."

"And it needs to reach a high temperature of more than 1000 two hundred degrees."

"Otherwise the implantation depth cannot meet the requirements, and a stable and usable N-drift layer cannot be formed."

"More importantly, compared with pure silicon crystals, silicon carbide crystals are doped with carbon atoms."

"And the aluminum ions, injected into the crystal with strong energy, can also break the molecular bonds of the carbon atoms, resulting in flaws in the finished product."

"The process of ion implantation to manufacture silicon carbide chips is too difficult and the cost is too high, which is one of the reasons why silicon carbide crystals are better than single silicon crystals but have not been widely used in integrated chips."

"Of course, if you are unfamiliar with the name 'ion implantation', then you should be familiar with it by changing the name."

When he said this, the audience in the live broadcast room suddenly became curious and asked what it was.

Looking at the barrage, Han Yuan smiled, and continued:
"Particle accelerator!"

Hearing this, the live broadcast room suddenly became lively.

[Particle accelerator! 】

[Good guy, is the anchor going to make this? 】

[There is still a difference between a particle accelerator and a particle collider, the latter is a waste of money. 】

[The old cow eats tender grass, and the garbage that returns to the country in his later years prevents our country from building the one? 】

[? ? ? ? ?Upstairs, show some respect to Mr. Yang. 】

[Where did the stinking idiot come from?Mr. Yang is one of the top five people in the entire history of physics, and his achievements are no less than any famous physicists we often mention. 】

[To be honest, I also think that Mr. Yang is right to oppose it. Is it bad to waste that money on researching operating systems and chips? 】

[Same support, tens of billions is much better in education than building a collider, at least it can reduce the wisdom on the Internet by half, such as the idiot before. 】

【If I were his mother, I would definitely push it back and be born again. If I were his father, I would have shot him on the wall back then! 】

Seeing the barrage, Han Yuan shook his head, didn't speak again, and continued to take care of the aluminum ion solution he was electrifying.

In fact, the two technologies of aluminum ion source manufacturing and ion implantation have already involved the core manufacturing of integrated chips.

It's just that he didn't explain this point, but some researchers in his live broadcast room must know it.

Because he saw some bullet screens before which directly indicated that he was using ion doping, and he also asked whether this method can stably build the N-drift layer, and even how many millimeters it can be implanted.

And this kind of question is obviously not something ordinary audiences can ask.

Although the transistor he manufactured, which is between the original transistor and the integrated chip, needs to be etched and etched to form an N-drift layer and a P well just like a modern chip.

Although some steps are the same, there are significant differences.

(End of this chapter)